Method of manufacturing semiconductor laser using...

Details Method of manufacturing semiconductor laser using... Method of manufacturing semiconductor laser using...

2011-02-22

2011-02-22

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C438S038000, C257SE21599

Reexamination Certificate

active

07892866

ABSTRACT:
The invention provides an end-face-processing jig that allows the formation of a reflectance control film on an end face of a semiconductor laser body while preventing possible degradation due to catastrophic optical damage (COD) of a semiconductor laser, and a method of manufacturing a semiconductor laser employing such an end-face-processing jig. A window part of the end-face-processing jig is made of at least one of an oxide and a nitride, and semiconductor laser bars are fixed by the end-face-processing jig so that their end faces are exposed through a window of the window part. In this condition, a reflectance control film is formed on the end faces of the semiconductor laser bars for the manufacture of a semiconductor laser. This prevents a metal from being taken in the reflectance control film, thus preventing the absorption of light caused by a metal taken in the reflectance control film. It is thus possible to form a reflectance control film on the end faces of semiconductor laser bars while preventing possible degradation due to COD of a semiconductor laser.

REFERENCES:
patent: 6703254 (2004-03-01), Saitoh et al.
patent: 6756322 (2004-06-01), Ohta
patent: 60-140779 (1985-07-01), None
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patent: 2000-196180 (2000-07-01), None
patent: 2000-196180 (2000-07-01), None

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