Method of manufacturing semiconductor laser device structure

Details Method of manufacturing semiconductor laser device structure Method of manufacturing semiconductor laser device structure

2004-08-06

2008-11-04

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S041000, C438S042000, C438S043000, C438S044000, C257S466000

Reexamination Certificate

active

07445949

ABSTRACT:
A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.

REFERENCES:
patent: 2004/0245540 (2004-12-01), Hata et al.
patent: 2004/0248334 (2004-12-01), Hoss et al.
patent: 2005/0218414 (2005-10-01), Ueda et al.
patent: 2006/0175621 (2006-08-01), Ohtsuka et al.

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