Method of manufacturing semiconductor laser

Details Method of manufacturing semiconductor laser Method of manufacturing semiconductor laser

1992-09-17

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 437133, 437141, 437248, 372 45, H01L 2120

Patent

active

052984567

ABSTRACT:
In a method of manufacturing a semiconductor laser according to the present invention, an n-type (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P (0.5.ltoreq.y.ltoreq.1) cladding layer, an (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P (0.ltoreq.z.ltoreq.0.3) active layer, a p-type (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P cladding layer, and a p-type Ga.sub.0.5 In.sub.0.5 P layer are sequentially crystal-grown on a semiconductor substrate by metal organic-vapor phase epitaxy at a crystal growth rate of not less than 2.5 .mu.m/h to form a multi-layered structure. A stripe structure is formed on the multi-layered structure, and the stripe structure is sandwiched by an n-type GaAs current blocking layer on both sides. A p-type GaAs contact layer is flatly grown on the stripe structure and the n-type GaAs current blocking layer.

REFERENCES:
patent: 4566171 (1986-01-01), Nelson et al.
patent: 4569721 (1986-02-01), Hayakawa et al.
patent: 4835117 (1989-05-01), Ohba et al.
patent: 5190891 (1993-03-01), Yokotsuka et al.
patent: 5192711 (1993-03-01), Murakami et al.
Tohru Suzuki et al., "Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy", Japanese Journal of Applied Physics, vol. 27, No. 11, Nov., 1988, pp. 2098-2106.
H. Okuda et al., "Laser Parameter Dependence of InGaAlP Transverse-Hode Stabilized SBR Lasers", the Extended Abstracts of the 36th Spring Meeting Japanese Society Applied Physics, 1989, p. 886 1p-ZC-4, month unknown.

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