Method of manufacturing semiconductor laser

Details Method of manufacturing semiconductor laser Method of manufacturing semiconductor laser

1997-04-29

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

438 42, 438 44, 438 68, 438460, 438462, H01L 2100

Patent

active

058145320

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor laser. A wafer having a substrate having a semiconductor layer including a light-emitting forming portion epitaxially grown on a surface of the substrate is broken into laser chips having a light-emitting surface at an end face thereof. When breaking the wafer into the chips, the breaking at the light-emitting surface is carried out by first forming street grooves in the substrate and thereafter cleaving the light-emitting layer forming portion. By doing so, there is no necessity of thinning the substrate to a required extent, facilitating handling during the manufacture process. A roughened surface of the street groove is provided in the substrate underlying the light-emitting layer forming portion, which is convenient for irregular reflection of a return light beam often encountered in an optical disc pickup device.

REFERENCES:
patent: 4788161 (1988-11-01), Goto et al.
patent: 4865684 (1989-09-01), Bouadma
patent: 5180685 (1993-01-01), Yamamoto et al.
patent: 5629233 (1997-05-01), Chand et al.

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