Method of manufacturing semiconductor integrated circuit with pr

Details Method of manufacturing semiconductor integrated circuit with pr Method of manufacturing semiconductor integrated circuit with pr

1975-08-15

1977-04-12

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577, 29578, 29580, 148175, 357 49, 357 50, 357 59, H01L 2120, H01L 2176

Patent

active

040173410

ABSTRACT:
In a monolithic semiconductor integrated circuit, when polycrystalline semiconductor is used in a portion of substrate insulatively supporting plural semiconductor single crystal regions forming circuit elements, the oxidation process of the impurity diffusion process at high temperatures and in oxygen atmosphere is started after a passivation film such as silicon oxide or silicon nitride, to prevent oxygen from diffusing or penetrating into the surface of the polycrystalline semiconductor, has been formed on the same surface. By leaving the passivation film lying on that surface during the oxidation and diffusion process warping of the substrate that may be caused due to the diffusion or penetration of oxygen into the polycrystalline semiconductor region is prevented.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3462650 (1969-08-01), Hennings et al.
patent: 3494809 (1970-02-01), Ross
patent: 3566220 (1971-02-01), Post
patent: 3721588 (1973-03-01), Hays
patent: 3798753 (1974-03-01), Camenzind et al.
patent: 3862852 (1975-01-01), Kamins
patent: 3925803 (1975-12-01), Kobayashi
patent: 3929528 (1975-12-01), Davidson
Lee, F.H., "Dielectrically Isolated Saturating Circuits", IEEE Trans. on Electron Devices, vol. ED-15, No. 9, Sept. 1968, pp. 645-650.

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