Method of manufacturing semiconductor integrated circuit device

Details Method of manufacturing semiconductor integrated circuit device Method of manufacturing semiconductor integrated circuit device

1997-04-24

2000-11-14

Nelms, David

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438648, 438685, 438697, 438699, H01L 21302

Patent

active

061470015

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit wherein a patterned wafer polishing machine for uniformly polishing a surface by chemical mechanical polishing is utilized which is provided with a head for holding a wafer and rubbing it on an abrasive surface. A pressure plate provided with vents is held by the head body which is provided with a gas inlet and an elastic film for sealing vents is provided on the end face on the side reverse to the gas inlet side of the pressure plate. A patterned wafer is held by the head as the wafer, pressed by action of the pressure of air from the gas inlet via the elastic film is pressed mechanically by the pressure plate. The polishing surface which is a principal plane on the patterned side of the wafer is mechanochemically polished by the abrasive surface.

REFERENCES:
patent: 5604158 (1997-02-01), Cadien et al.
patent: 5772780 (1998-06-01), Homma et al.
patent: 5895270 (1999-04-01), Hempel, Jr.

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