Method of manufacturing semiconductor integrated circuit device

Details Method of manufacturing semiconductor integrated circuit device Method of manufacturing semiconductor integrated circuit device

1992-10-22

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 57, 437 59, 437200, 437162, 148DIG9, H01L 21265

Patent

active

053546997

ABSTRACT:
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.

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