Method of manufacturing semiconductor epitaxial wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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117 86, 117 89, 117104, 117108, 117101, 427283, C30B 2502

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056606281

ABSTRACT:
There is provided a method for suppressing generation of cracks or damages on a compound semiconductor epitaxial wafer during an epitaxial growth due to growth of an epitaxial layer on the rear surface at the edge of the epitaxial layer which is located at the upstream side of the flow of the source gas. In manufacturing a semiconductor wafer by growing a single crystal semiconductor epitaxial layer having a zinc blend structure on a single crystal semiconductor substrate having a zinc blend structure, the surface of the single crystal semiconductor substrate has (100) surface orientation having an off angle and a source gas is supplied in the direction of the off angle or in a direction at 30.degree. or less to the direction at 180.degree. thereto.

REFERENCES:
patent: 4422888 (1983-12-01), Stutius
patent: 4526809 (1985-07-01), Hall et al.
"Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate";Joerg, et al, Proc. SPIE-Int. Soc. Opt. Eng. (1991), 1361 (Phys. Concepts Mater. Novel Optoelectron, Devive Appl. 1, Pt. 2), pp. 963-971.
"Epitaxial Zinc Sulfide layers"; Kh, et al.; Izv. Khiu. (1976), 9(3), pp.484-495.
"Direct Synthesis of epitaxial Zinc Sulfide layers on zinc single crystal substrates"; Nanev, K. et al; Thin Solid Films (1976), 35(2), 155-163.
K.K. Schuegraf "Handbook of thin-film deposition processes and techniques". (1988), p. 56.

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