Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2005-07-26
2005-07-26
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S038000, C438S029000
Reexamination Certificate
active
06921677
ABSTRACT:
When manufacturing semiconductor elements, a group of semiconductor elements having a diffraction grating formed partly on the side of the facet from which laser light is emitted is formed collectively on a semiconductor wafer by using semiconductor process technologies. The semiconductor laser elements are arranged such that the light emitting facets are opposite to each other to thereby form each diffraction grating of the semiconductor laser elements arranged opposite to each other as one diffraction grating, cleaving this diffraction grating at respective cleavage planes to cut out laser bars, followed by the cleavage of cleavage planes to cut out semiconductor laser elements.
REFERENCES:
patent: 5180685 (1993-01-01), Yamamoto et al.
patent: 5260231 (1993-11-01), Kawanishi et al.
patent: 5352919 (1994-10-01), Takano
patent: 5392308 (1995-02-01), Welch et al.
patent: 5537432 (1996-07-01), Mehuys et al.
patent: 5602864 (1997-02-01), Welch et al.
patent: 5651018 (1997-07-01), Mehuys et al.
patent: 5822352 (1998-10-01), Mizutani et al.
patent: 5864574 (1999-01-01), Welch et al.
patent: 5981307 (1999-11-01), Matsuda
patent: 6008675 (1999-12-01), Handa
patent: 6075799 (2000-06-01), Uchida et al.
patent: 6111906 (2000-08-01), Muroya
patent: RE37354 (2001-09-01), Welch et al.
patent: 6384963 (2002-05-01), Ackerman et al.
patent: 6501777 (2002-12-01), Sato
patent: 6577660 (2003-06-01), Muroya
patent: 6707836 (2004-03-01), Orita et al.
patent: 2001/0005391 (2001-06-01), Sakata
Irino Satoshi
Tsukiji Naoki
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Schillinger Laura M
The Furukawa Electric Co., LTD.
LandOfFree
Method of manufacturing semiconductor element, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor element, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor element, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3387950