Method of manufacturing semiconductor element

Details Method of manufacturing semiconductor element Method of manufacturing semiconductor element

2008-11-03

2011-11-22

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S046000, C438S113000, C257SE21499

Reexamination Certificate

active

08062959

ABSTRACT:
A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.

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