Method of manufacturing semiconductor element

Details Method of manufacturing semiconductor element Method of manufacturing semiconductor element

2006-11-14

2006-11-14

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S495000, C438S510000, C438S034000, C438S035000, C438S045000, C438S308000, C438S166000, C438S466000, C438S469000, C438S535000, C438S540000, C438S795000, C257SE21043

Reexamination Certificate

active

07135387

ABSTRACT:
A method for stably activating pn-successive layers in a semiconductor element in a short time is disclosed. Pulsed beams, each of which has a pulse shape that is approximately rectangular, are projected from respective laser irradiation devices and successively combined into a pulsed beam equivalent to one pulse, with which the doped layer region is irradiated. By successively projecting the pulsed beams onto the doped layer region in this way, an effect is obtained which is the same as that of irradiating the doped layer region with a single pulsed beam having a long full-width at half maximum. A high activation ratio from a shallow region to a deep region of the doped layer region is enabled. This can stably activate the semiconductor element having the pn-successive layers as the doped layer region in a short time, making possible the manufacture of semiconductor elements having superior device characteristics.

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Related co-pending U.S. Appl. No. 11/464,489, Michio Nemoto et al.; Method of Manufacturing Semiconductor Device and Semiconductor Device Formed by the Method; Spec. pp. 1-21, Figs 1-8.

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