Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1976-03-05
1977-05-17
Drummond, Douglas J.
Metal working
Method of mechanical manufacture
Assembling or joining
29583, 29590, 29591, 156645, 156659, 357 55, 357 65, B01J 1700, H01L 21302
Patent
active
040232603
ABSTRACT:
A new method of manufacturing semiconductor diodes is described in which the resulting diode chips have ohmic contacts on the four side surfaces of the diode chip. An insulating layer of a material such as silicon-dioxide is first formed on the epitaxial layer of a semiconductor wafer. Notches are then cut in a gridlike pattern into the semiconductor wafer on the side of the chip having the insulating layer. The notches extend approximately halfway into the semiconductor wafer and form a plurality of areas, each one of which has the dimensions of a desired diode chip. An ohmic contact is then established on the walls and bottoms of the notches by depositing a metallic layer and alloying this layer to the semiconductor material. A plurality of diodes are formed in holes in the insulating layer on each one of the areas representing an individual chip. The semiconductor wafer is then backlapped to remove the remaining material connecting the individual chips together thereby forming a plurality of individual diode chips.
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Bell Telephone Laboratories Incorporated
Drummond Douglas J.
Dubosky Daniel D.
Massie Jerome W.
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