Method of manufacturing semiconductor devices with semiconductor

Details Method of manufacturing semiconductor devices with semiconductor Method of manufacturing semiconductor devices with semiconductor

1995-12-21

1998-07-14

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438455, 438458, 438928, 438958, H04L 2146

Patent

active

057803544

ABSTRACT:
A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

REFERENCES:
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 5324678 (1994-06-01), Kusunoki
patent: 5376561 (1994-12-01), Vu et al.
patent: 5403729 (1995-04-01), Richards et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5520297 (1996-05-01), Kagami et al.

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