Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1973-12-19
1977-02-15
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576R, 29578, 29580, 148187, 357 49, 357 50, 357 86, 357 88, H01L 2176, H01L 2704
Patent
active
040081079
ABSTRACT:
An improved method of manufacturing a semiconductor device employs a local oxidation process in which an oxide isolation region is formed by locally oxidizing a silicon epitaxial layer, using a nitride-oxide double layer for masking purposes, with a P.sup.+ type region being formed by the diffusion of an impurity into the silicon epitaxial layer using the oxide isolation region, which has an "oxide beak", as a diffusion mask. An additional region of the same conductivity type as the P.sup.+ type diffused region is provided to be contiguous to the P.sup.+ type diffused region, so that a PN junction terminates at a silicon surface remote from the electrode to be connected to the P.sup.+ diffused region.
As a result, disadvantages caused by the oxide beak, such as the imperfect protection of the PN junction and short-circuiting between the electrode and the epitaxial layer through pin holes in the oxide beak can be eliminated.
REFERENCES:
patent: 3427709 (1969-02-01), Schutze et al.
patent: 3456169 (1969-07-01), Klein
patent: 3591430 (1971-07-01), Schlegel
patent: 3596149 (1971-07-01), Makimoto
patent: 3648125 (1972-03-01), Peltzer
patent: 3659160 (1972-04-01), Sloan et al.
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3873383 (1975-03-01), Kooi
Baker et al., "Impact of Isoplanar--Read/Write Memories" IEEE International Electron Devices Mtg., Dec. 3-5, 1973, pp. 1-8.
Appels et al., "Local Oxidation of Silicon; New Technological Aspects" Philips Res. Repts., vol. 26, No. 3, June 1971, pp. 157-165.
Kemlage, B. M., "Prevention of Metal to Base Shorting" IBM Tech. Discl. Bull., vol. 13, No. 5, Oct. 1970, pp. 1299-1300.
Murphy et al., "Simplified Bipolar--Application to Systems" IEEE J. Solid State Circuits, vol. 50-55, No. 1, Feb. 1970, pp. 7-14.
Appels et al., "Local Oxidation of Silicon--Technology" Philips Res. Repts. 25, 118-132, Apr. 1970.
Kooi et al., "Selective Oxidation of Silicon-- Device Applications" Semiconductor Silicon/1973, text, Huff et al., eds., May, 1973, pp. 860-879.
Peltzer et al., "Isolation Method--Dense Memories" Electronics, Mar. 1, 1971, pp. 52-55.
Hayasaka Akio
Kondo Hiroyuki
Noda Hideo
Suzuki Michio
Hitachi , Ltd.
Rutledge L. Dewayne
Saba W. G.
LandOfFree
Method of manufacturing semiconductor devices with local oxidati does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor devices with local oxidati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices with local oxidati will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1436011