Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-05-30
1980-12-16
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576W, 29578, 148187, 148190, 357 34, 357 44, 357 46, 357 48, 357 89, 357 90, H01L 2120, H01L 2122
Patent
active
042395585
ABSTRACT:
A method of manufacturing a semiconductor device having at least one power transistor and a plurality of small signal transistors formed on the same semiconductor substrate is disclosed. First, a base region of the power transistor and an isolating region are formed by diffusion simultaneously in an epitaxial layer on the semiconductor substrate. Second, an emitter region of the power transistor and the collector regions of the small signal transistors are simultaneously formed by diffusion, and finally the bases, and emitters of the small signal transistors are formed in succession by diffusion.
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Iwatani Shiroh
Morishita Mitsuharu
Mitsubishi Denki & Kabushiki Kaisha
Rutledge L. Dewayne
Saba W. G.
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