Method of manufacturing semiconductor devices utilizing a sure-s

Details Method of manufacturing semiconductor devices utilizing a sure-s Method of manufacturing semiconductor devices utilizing a sure-s

1978-04-12

1980-08-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148 15, 148174, 156612, 357 4, 357 16, 357 18, 357 22, 357 65, 357 67, 357 71, H01L 21203, H01L 2348

Patent

active

042182719

ABSTRACT:
Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by an M.B.E. process on an exposed surface of the III-V compound stratum. A III-V compound layer doped with the element constituting the film is deposited over the film, when making, for example an F.E.T. An ohmic contact layer is deposited over the film to make an ohmic contact.

REFERENCES:
patent: 3386867 (1968-06-01), Staples
patent: 3751310 (1973-08-01), Cho
patent: 3839084 (1974-10-01), Cho et al.
patent: 3863334 (1975-02-01), Coleman
patent: 3915765 (1975-10-01), Cho et al.
patent: 3941624 (1976-03-01), Cho
patent: 3987480 (1976-10-01), Diguet et al.
Aleksandrov, L. N., "Formation and Properties . . . Films" J. Crystal Growth, v. 31, 1975, pp. 103-112.

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