Method of manufacturing semiconductor devices using trench isola

Details Method of manufacturing semiconductor devices using trench isola Method of manufacturing semiconductor devices using trench isola

1989-09-28

1991-01-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 33, 156648, H01L 21461, H01L 2176

Patent

active

049886398

ABSTRACT:
In a method of manufacturing semiconductor devices employing a trench isolation method in which trenches of different depth are formed in a silicon body and insulating materials are filled in these trenches, there is described the manufacturing method having a step of forming a first depth trench, filling with a first insulating material in the first depth trench, forming a second depth trench, which is formed relatively shallow and adjoins at least a part of the first trench and filling with a second insulating material in the second depth trench.

REFERENCES:
patent: 4338138 (1982-07-01), Cavaliere
patent: 4394196 (1983-07-01), Iwai
patent: 4454647 (1986-06-01), Joy
patent: 4551911 (1985-11-01), Sasaki
1982 IEEE International Solid-State Circuits Conference/Friday, Feb. 12, 1982, Session XVII: Device Structures and Technology, "FAM 17.6:1.25 .mu.m Deep-Groove-Isolated Self-Aligned ECL Circuits".

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices using trench isola does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices using trench isola, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices using trench isola will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-813293