Method of manufacturing semiconductor devices using lift-off tec

Details Method of manufacturing semiconductor devices using lift-off tec Method of manufacturing semiconductor devices using lift-off tec

1980-07-28

1982-05-04

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

1566591, 427 88, 427 89, 427 95, 427 96, 427259, 430314, H01L 21316

Patent

active

043282636

ABSTRACT:
In a method of manufacturing semiconductor devices, liquid glass is applied to the substrate of a semiconductor device to cover the upper surface of a film of photoresist formed on a conductor layer of the substrate and used as an etching mask for patterning the conductor layer. The substrate is baked at a sufficiently high temperature to harden the liquid glass and deform and shrink the photoresist film to expose the sides of such film. The photoresist film is removed. The hardened liquid glass on the photoresist film is simultaneously removed by lift off.

REFERENCES:
patent: 3723277 (1973-03-01), Schmiedecke
patent: 4029562 (1977-06-01), Feng et al.
patent: 4123565 (1978-10-01), Sumitomo
patent: 4181755 (1980-01-01), Liu

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