Method of manufacturing semiconductor devices using an adsorptio

Details Method of manufacturing semiconductor devices using an adsorptio Method of manufacturing semiconductor devices using an adsorptio

1993-02-12

1994-10-11

Breneman, R. Bruce

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

437162, H01L 2100, H01L 2102, H01L 21225, H01L 21385

Patent

active

053547101

ABSTRACT:
A method of manufacturing semiconductor devices comprises the steps of preparing a semiconductor substrate having a surface and a natural oxide film on the surface, forming an adsorption enhancement layer on the surface of the semiconductor substrate, forming an impurity adsorption layer containing impurities on the adsorption enhancement layer, and thermally diffusing the impurities through the adsorption enhancement layer and the natural oxide film into the substrate.

REFERENCES:
patent: 4549914 (1985-10-01), Oh
patent: 4554728 (1985-11-01), Shepard
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4666557 (1987-05-01), Collins et al.
patent: 4676847 (1987-06-01), Lin
Arienzo, M., In Situ Arsenic-Doped Polysilicon for VLSI Applications, IEEE Trans. Electron Devices, vol. ED-33, No. 10, Oct. 1986.
Shandhi, S., VLSI Fabrication Principles, Chap. 7, pp. 372-373, Wiley & Sons, 1983.
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 319-322, Plasma Doping into the Sidewalls of Sub -0.5 um Width Trench.

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