Method of manufacturing semiconductor devices, involving the det

Details Method of manufacturing semiconductor devices, involving the det Method of manufacturing semiconductor devices, involving the det

1989-08-18

1990-07-03

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Processes of treating materials by wave energy

357 25, 437 8, G01N 2700

Patent

active

049388479

ABSTRACT:
Disclosed is a method of semiconductor device fabrication involving the detection of water in a dielectric layer that is part of the body of such device. At relatively high values of a voltage applied across the dielectric layer, water that is present in the dielectric decomposes and releases protons. Varying the applied voltage gives rise to a displacement current. The released protons contribute an ionic component to the displacement current. The ionic component is detected.

REFERENCES:
M, Kuhn and D. J. Silversmith, "Ionic Contamination and Transport of Mobile Ions in MOS Structures", J. Electrochem. Soc.: Solid State Science, vol. 118, No. 6, Jun. 1971.
N. J. Chou, "Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures", J. Electrochem. Soc.: Solid State Science, vol. 118, No. 4, Apr. 1971.
S. R. Hofstein, IEEE Trans. on Electron Devices, ED-13, 222 (1986).

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