Method of manufacturing semiconductor devices including rounding

Details Method of manufacturing semiconductor devices including rounding Method of manufacturing semiconductor devices including rounding

1993-03-08

1993-11-02

Fourson, George

Fishing, trapping, and vermin destroying

437919, 437 52, 437 67, 156644, H01L 21311

Patent

active

052583325

ABSTRACT:
A method for rounding the corners of trench formed on the silicon substrate with metal, metal silicide or polycrystalline silicon thin film or the step portions of lead layers is provided. The steps of rounding are performed by chemical dry etching using a gas mixture of fluorine and oxygen. The abundance ratio of oxygen is determined to be one or more with respect to the fluorine. This method contributes significantly to the prevention of leakage current and the enhancement of insulating effect in the case of forming trench capacitors or the like.

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Bassous, "Low Temperature Methods for Rounding Silicon Nozzles", IBM Tech. Disc. Bull., vol. 20, No. 2 (Jul. 1977), pp. 810-811.

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