Method of manufacturing semiconductor devices, in which material

Details Method of manufacturing semiconductor devices, in which material Method of manufacturing semiconductor devices, in which material

1985-04-15

1986-10-07

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

118719, 118725, 118728, 427 86, 427 95, H01L 21314

Patent

active

046159096

ABSTRACT:
A number of wafer slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube with the reactor tube having openings through which a reaction gas is passed for depositing semiconductor material on the wafer slices. This is effected by producing in the furnace tube a flow of reaction gas along the outer side walls of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By using this method, particles of large size and different composition, which may be formed in the reaction gas, are prevented from being deposited on the wafer slices.

REFERENCES:
patent: 4098923 (1978-07-01), Albert
patent: 4232063 (1980-11-01), Rosler
patent: 4275094 (1981-06-01), Takagi
patent: 4309240 (1982-01-01), Zuferes
patent: 4369031 (1983-01-01), Goldman
patent: 4466381 (1984-08-01), Jenkins

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