Method of manufacturing semiconductor devices having silicide el

Details Method of manufacturing semiconductor devices having silicide el Method of manufacturing semiconductor devices having silicide el

1995-07-13

1996-11-19

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437 46, 437192, H01L 2128

Patent

active

055762441

ABSTRACT:
A method of manufacturing a semiconductor substrate with a silicide electrode (interconnection) capable of forming a local interconnection by using a silicide formation technique. The method includes the steps of: selectively oxidizing the surface of a silicon semiconductor substrate to form a local oxide film and to define at least partially a silicon surface; depositing a cobalt film covering the silicon surface and local oxide film; depositing a silicon film on the cobalt film, and patterning the silicon film to form a silicon film pattern extending from the silicon surface to the local oxide film; forming a TiN film over the cobalt film; heating the substrate to progress a silicidation reaction between the cobalt film and silicon surface and between the cobalt film and silicon film pattern; and removing the remaining TiN film and an unreacted portion of the cobalt film.

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