Method of manufacturing semiconductor devices having photoresist

Details Method of manufacturing semiconductor devices having photoresist Method of manufacturing semiconductor devices having photoresist

1980-07-28

1982-05-04

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 82, 427 90, 427 88, 357 54, 430314, H01L 21312, H01L 21316

Patent

active

043282628

ABSTRACT:
A layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is covered with a positive photoresist film which is then heat treated. An upper surface of the photoresist film is covered with a polyimide resin which is heat treated, thereafter. If the semiconductor device is devoid of the layer of phospho-silicate glass, and the layer of aluminum is exposed, a positive photoresist film is interposed on the aluminum and the polyimide resin is applied to cover the upper surface of the interlayer, and is heat treated.

REFERENCES:
patent: 3373323 (1968-03-01), Wolfrum et al.
patent: 3602635 (1971-08-01), Romankiw
patent: 3903590 (1975-09-01), Yokogawa

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