Method of manufacturing semiconductor devices having isoelectron

Details Method of manufacturing semiconductor devices having isoelectron Method of manufacturing semiconductor devices having isoelectron

1977-05-19

1979-05-15

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148175, 148187, 357 16, 357 18, 357 63, H01L 21208, H01L 2920

Patent

active

041546300

ABSTRACT:
A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centers.
The method is characterized in that the deposition of the nitrogen-doped layer is succeeded by the deposition of a deep layer containing less nitrogen doping after which a p-n junction is formed in the first layer.

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Logan et al., "Efficient Green Electroluminescent ----GaP," Solid-State Electronics, vol. 14, No. 1, Jan. 1971, pp. 55-70.
Kasami et al., "High-Performance GaP Green LED Display," Toshiba Review, No. 102, Mar.-Apr. 1976, pp. 29-33.
Craford et al., "LED Technology," Solid State Technology, Jan. 1974, pp. 39-58.

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