Method of manufacturing semiconductor devices having improved al

Details Method of manufacturing semiconductor devices having improved al Method of manufacturing semiconductor devices having improved al

1979-08-31

1980-11-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29574, 29576W, 29578, 29580, 148 15, 148174, 156626, 156647, 156649, 156653, 156657, 156662, 357 49, 357 50, 357 54, 357 56, 357 59, H01L 2120, H01L 21302, H01L 2176

Patent

active

042330912

ABSTRACT:
A semiconductor device comprises a V-groove isolation structure and an alignment mark having a sharp contour. The alignment mark consists of a locally thick portion of an oxide layer covering an epitaxial layer in which a V-groove is formed. The alignment mark is produced by a thermal oxidizing operation involved in the manufacturing procedure of the V-groove isolation structure.

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patent: 3979237 (1976-09-01), Morcom et al.
patent: 3998673 (1976-12-01), Chow
patent: 4125418 (1978-11-01), Vinton
Fields, S. W., "The Great Bipolar Ram Race", Electronics, Jul. 3, 1972, pp. 65-66.

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