Method of manufacturing semiconductor devices having a resist pa

Details Method of manufacturing semiconductor devices having a resist pa Method of manufacturing semiconductor devices having a resist pa

1992-06-10

1994-03-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 57, 437193, 437913, H01L 21265

Patent

active

052907171

ABSTRACT:
A method of manufacturing a semiconductor device including a MOS transistor, wherein a second resist pattern having openings respectively defining gate, source, and drain regions is formed while leaving a first resist pattern on a gate material film, i.e., a polycrystalline silicon film, which is used to form a gate electrode. Impurities are implanted into the source and drain regions by using the first and second resist patterns as a mask. The impurities are stopped in the inside of the first resist pattern on the gate and are not implanted into the gate.

REFERENCES:
patent: 4517731 (1985-05-01), Khan et al.
patent: 4590663 (1986-05-01), Haken
patent: 4830974 (1989-05-01), Chang et al.
patent: 5036019 (1991-07-01), Yamane et al.
patent: 5091763 (1992-02-01), Sanchez
J. Y. C. Sun et al., Study Of Boron Penetration through Thin Oxide With P.sup.+ -Polysilicon Gate, Symposium on VLSI Technology, 1989, pp. 17-18.

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