Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1976-05-03

1977-08-23

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21263

Patent

active

040438368

ABSTRACT:
Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100.degree. C, and preferably in the range of 150.degree. to 375.degree. C. No post irradiation annealing step is required.

REFERENCES:
patent: 3507709 (1970-04-01), Bower
patent: 3829961 (1974-08-01), Bauerlein et al.
patent: 3881964 (1975-05-01), Cresswell et al.
patent: 3941625 (1976-03-01), Kennedy et al.
patent: 3943013 (1976-03-01), Kennedy et al.

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