Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1988-06-01

1990-05-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, H01L 2166

Patent

active

049277855

ABSTRACT:
A method of manufacturing semiconductor devices is set forth using reactive ion plasma etching in which an optical grating is formed to etch underlying regions, such as dielectric material, semiconductor material, or alternate layers of different semiconductor material. The optical grating is formed with a rectangular profile having grooves and mask strips on a sample material where each of the grooves has a width L.sub.S substantially equal to the width L.sub.M of the mask strips. The optical grating is formed of a material which may be one of a photoresist, a dielectric compound, a metal, or a metallic compound. This method enables control of reactive ion etching during manufacture of integrated circuits of III-V compounds.

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Kleinknecht, "Optical Monitoring . . .", 5/78, J Electrochem Soc, pp. 798-803.

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