Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1976-12-09

1978-10-31

Esposito, Michael F.

Coating processes

Electrical product produced

Condenser or capacitor

427 89, 427 90, 427 91, 427 93, 427 96, 427 99, 427240, 156656, 156657, 156659, 156662, 29625, B05D 512, B05D 312

Patent

active

041235657

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is formed and having substantially the same thickness as that of the insulating layer, an insulating film formed flat on the insulating layer and wiring layer in a manner that it occupies grooves between the insulating layer and the wiring layer, an intermediate insulating layer formed on the insulating film, and another wiring layer formed on the intermediate insulating layer. The semiconductor device has a rupture-free multi-layer structure which exhibits an excellent electrical property.

REFERENCES:
patent: 3212921 (1965-10-01), Pliskin et al.
patent: 3212929 (1965-10-01), Pliskin et al.
patent: 3406041 (1968-10-01), Conrad
patent: 3632434 (1969-01-01), Hutson
patent: 4022930 (1977-05-01), Fraser
patent: 4039702 (1977-08-01), Dibugnara
patent: 4045594 (1977-08-01), Maddocks

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1835783