Etching a substrate: processes – Forming or treating material useful in a capacitor
Patent
1997-01-24
1998-11-24
Utech, Benjamin
Etching a substrate: processes
Forming or treating material useful in a capacitor
216 76, 438717, 438722, 438736, 438738, H01L 21302
Patent
active
058402004
ABSTRACT:
A device insulating film, a lower-layer platinum film, a ferroelectric film, an upper-layer platinum film, and a titanium film are sequentially formed on a semiconductor substrate in this order. On the titanium film, a photoresist mask is further formed in a desired pattern. The thickness of the titanium film is adjusted to be 1/10 or more of the total thickness of a multilayer film consisting of the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film. The titanium film is then subjected to dry etching and the photoresist film is removed by ashing process. The titanium film thus patterned is used as a mask in etching the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film by a dry-etching method using a plasma of a gas mixture of chlorine and oxygen in which the volume concentration of oxygen gas is adjusted to be 40%. During the dry-etching process, the titanium film is oxidized to provide a high etching selectivity. Subsequently, the titanium film is removed by dry etching using a plasma of chlorine gas.
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Bito Yoji
Ito Toyoji
Nagano Yoshihisa
Nakagawa Satoshi
Goudreau George
Matsushita Electronics Corporation
Utech Benjamin
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