Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1974-12-24

1976-06-15

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148188, 427 88, H01L 21225

Patent

active

039635236

ABSTRACT:
A method of manufacturing semiconductor devices is provided which comprises the steps of depositing a coating of platinum on the surface of a silicon substrate prior to the formation of a plated nickel layer thereon, plating a layer of nickel on the silicon substrate coated with platinum, and then subjecting the structure to the process of heat treatment to thereby cause the platinum to diffuse into the silicon substrate, whereby the platinum acts to increase the adhesion strength of the plated nickel layer on the silicon substrate and further the platinum element diffused into the silicon substrate serves as a lifetime killer of carriers to thereby improve the switching characteristic of the semiconductor device.

REFERENCES:
patent: 3337779 (1967-08-01), Bowman et al.
patent: 3356543 (1967-12-01), Desmond et al.
patent: 3360695 (1967-12-01), Lindmayer
patent: 3640783 (1972-02-01), Bailey
patent: 3711325 (1973-01-01), Hentzschel

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