Method of manufacturing semiconductor devices

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148175, 148188, 148190, 148191, 357 47, 357 48, H01L 2122

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active

039472990

ABSTRACT:
A method of making a semiconductor device for application in a monolithic integrated circuit is described wherein a local buried insulating layer is provided at the interface of a substrate and a semiconductive layer, and then the semiconductive layer is locally converted into a insulator which extends down to the buried insulator. The method is useful, among other things, for providing isolated semiconductor islands.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3631309 (1971-12-01), Myers
patent: 3648125 (1972-03-01), Peltzer
patent: 3649386 (1972-03-01), Murphy
patent: 3796613 (1974-03-01), Magdo et al.

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