Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1995-11-29

1998-04-28

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438706, 438710, 438742, 438743, H01L 2130, H01L 21336

Patent

active

057444021

ABSTRACT:
In a method of removing a polymer and the leavings of the resist pattern that have adhered during dry etching to a film formed on a semiconductor substrate, the etched film undergoes plasma etching with the resist patter as a mask. Next, the resist pattern is removed by O.sub.2 plasma ashing and then the surface of the substrate is washed with pure water. Thereafter, with the substrate heated to 40.degree. C. or higher, the surface of the substrate is exposed to HF vapor and then the surface of the substrate is rinsed with pure water. With this method, the polymer and the leavings of the resist pattern that have adhered to the etched film can be removed easily.

REFERENCES:
patent: 5017513 (1991-05-01), Takeuchi
patent: 5200360 (1993-04-01), Bradbury et al.
patent: 5200361 (1993-04-01), Onishi
patent: 5323046 (1994-06-01), Ema et al.

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