Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1974-09-06

1976-07-06

Dipalma, Victor A.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, H01L 2188, H01L 21441

Patent

active

039673642

ABSTRACT:
A method of manufacturing a MOSIC comprises the steps of forming a diffused layer selectively in one principal plane of a semiconductor substrate, forming a first insulating film on the substrate, forming a first wiring layer after providing holes in the first insulating film, diffusing an impurity through the holes to form source and drain regions, forming a second insulating film on the first wiring layer, and thereafter forming a second wiring layer which is connected with the diffused layer.

REFERENCES:
patent: 3623217 (1971-11-01), Kawagoe et al.
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3700507 (1972-10-01), Murray
patent: 3785043 (1974-01-01), Tokuyama et al.
patent: 3789503 (1974-02-01), Nishida et al.
patent: 3803705 (1974-04-01), Goodwin
patent: 3818582 (1974-06-01), Kaiser
patent: 3824677 (1974-07-01), Scherber

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1526119