Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1979-02-28

1981-09-29

Gantz, Delbert E.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29578, 29580, 156643, 156649, 156657, 1566611, 156662, 204192E, 427 93, 427 94, H01L 21316, H01L 21318

Patent

active

042921562

ABSTRACT:
A method of manufacturing a semiconductor device which has a thick insulating layer on a region for isolating semiconductor circuit elements from one another on a semiconductor substrate. This region of the substrate is selectively etched by using an insulating layer to leave the unetched part of the substrate in a mesa like shape, then, an anti-oxidation masking layer is formed on the sides of the insulating layer and the sides of the mesa shaped part and, after that, the thick insulating layer is formed by an oxidation treatment.

REFERENCES:
patent: 3675314 (1972-07-01), Levi
patent: 3721592 (1973-03-01), DeWerdt
patent: 3958040 (1976-05-01), Webb
patent: 3961999 (1976-06-01), Antipov
E. Bassous et al., Topology of Silicon Structures With Recessed SiO.sub.2, J. Electrochem. Soc., vol. 123, No. 11, (Nov. 1976), pp. 1729-1737.
T. Saki et al., Stepped Electrode Transistor-SET, Japanese Journal of Applied Physics, vol. 16, (1977), Supplement 16-1, pp. 43-46.

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