Method of manufacturing semiconductor devices

Fishing – trapping – and vermin destroying

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437159, 437174, H01L 2126, H01L 21306

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052504654

ABSTRACT:
A semiconductor device having small diameter via-holes, particularly not greater than 0.6 microns, for a multilayer interconnection is produced by a method comprising covering an interlayer film and via-holes with a continuous, first metal film by a CVD process, and heating and melting by an irradiation of an energy beam a second metal film deposited on the first film by a PVD process, together with the first metal film, to fully fill the via-holes with the material from the outside of the holes, to thus form conductive plugs therein. The deposition of the material of the second metal film and the filling of the via-holes may be simultaneously performed by a high temperature sputtering process.

REFERENCES:
patent: 4826785 (1989-05-01), McClure et al.
patent: 4968643 (1990-11-01), Mukai
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5110759 (1992-05-01), Mukai
Patent Abstracts of Japan, vol. 12, No. 265 (E-637) 23 Jul. 1988 & JP-A-63 048841 dated Mar. 1, 1988.
W. Spiess et al., "Via hole filling with gold melting by KrF excimer laser irradiation," Journal of Vacuum Science and Technology: Part B, vol. 7, No. 1 Feb. 1989, New York, N.Y., pp. 127-128.

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