Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1975-02-28

1976-10-19

Lovell, C.

Metal treatment

Compositions

Heat treating

148187, 148188, 357 91, H01L 21225, H01L 2126

Patent

active

039868966

ABSTRACT:
A method of manufacturing semiconductor devices is disclosed which includes the steps of forming an insulating film on one surface of a semiconductor substrate, removing the insulating film selectively to expose at least a portion of one surface of the semiconductor substrate, forming a low temperature oxide film containing a first diffusion source which has a higher etch rate than the insulating film onto at least a part of the exposed surface while leaving the rest of the surface exposed, and heating the substrate to diffuse the first diffusion source film from the oxide film into the substrate and to diffuse a second diffusion source through the exposed surface into the substrate thereby at least two diffused regions can be formed on the substrate without relative displacement.

REFERENCES:
patent: 3391035 (1968-07-01), Mackintosh
patent: 3608189 (1971-09-01), Gray
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3764412 (1973-10-01), Muller et al.
Kroell et al., "Production of Complementary IGFETS," IBM Tech. Disc. Bull., vol. 15, No. 5, Oct. 1972, pp. 1623, 1624.

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