Method of manufacturing semiconductor device with overvoltage se

Details Method of manufacturing semiconductor device with overvoltage se Method of manufacturing semiconductor device with overvoltage se

1988-11-18

1990-05-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437228, 437 38, 357 38, H01L 21223, H01L 21265

Patent

active

049295632

ABSTRACT:
A method of manufacturing a semiconductor device with overvoltage self-protection of punchthrough type comprises the following steps.

REFERENCES:
patent: 4514898 (1985-05-01), Przybysz et al.
patent: 4516315 (1985-05-01), Przybysz et al.
patent: 4555845 (1985-12-01), Przybysz et al.
J. X. Przybysz, "Laser Trimming of Thyristors to Add an Overvoltage Self-Protected Turn-On Feature," 0275-9306/85/0000-0463, 1985, IEEE, pp. 463-468.
V. A. K. Temple, "Controlled Turn-on Thyristors," IEEE Transactions on Electron Devices, vol. Ed-30, No. 7, Jul. 1983, pp. 816-824.

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