Fishing – trapping – and vermin destroying
Patent
1994-10-17
1995-06-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 26, 437 27, 437 28, 437 45, 437968, 437 56, H01L 2176
Patent
active
054223016
ABSTRACT:
A method of manufacturing a semiconductor device with MOSFETs including the steps of forming an anti-oxidation film pattern over an element forming region of a semiconductor substrate, selectively oxidizing a region not covered with the anti-oxidation film pattern on the semiconductor substrate to form an isolating oxide film, and implanting impurities into the semiconductor substrate via the isolating oxide film and anti-oxidation film at a predetermined acceleration energy to form a threshold voltage control region under the anti-oxidation film and a channel stop region under the isolating oxide film. The channel stop region and threshold voltage control region can be formed by a single ion implantation process.
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F. S. Lai et al., A Highly Latchup-Immune 1 .mu.m CMOS Technology Fabricated with 1 MeV Ion Implantation and Self-Aligned TiSi.sub.2 ; IEEE; IEDM 85; pp. 513-516, May 1985.
Dang Trung
Fujitsu Limited
Hearn Brian E.
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