Method of manufacturing semiconductor device with controlled car

Details Method of manufacturing semiconductor device with controlled car Method of manufacturing semiconductor device with controlled car

1990-09-14

1993-03-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437240, 437214, 437215, 437923, 437247, H01L 2131, H01L 2176, H01L 2178

Patent

active

051963540

ABSTRACT:
A semiconductor device has a semiconductor substrate, an insulated gate field-effect transistor section formed in the substrate and a peripheral section formed in the substrate and arranged to substantially surround the field-effect transistor section. A passivation layer of an organic material is provided over that part of the substrate in which the field-effect transistor section is not located. The device may be resin mold packaged for an enhanced humidity-resistance by making use of the fact tht the peripheral portion of the device is covered with organic resin.

REFERENCES:
Ghandhi, "VLSI fabrication principles", John Wiley & Sons Inc., 1983 pp. 421-427.
Japanese Journal "Denshi Zairyo" (Material for Electronics), Dec. 1988, pp. 41-45, Kogyo-chosa-kai.
Japanese Journal "Denshi Zairyo" (Material for Electronics), Dec. 1988, pp. 46-52, Kogyo-chosa-kai.
R. Stengl and U. Gosele; Paper entitled "Variation of Lateral Doping--, A New Concept to Avoid High Voltage Breakdown of Planar Junctions," (1985) pp. 154-157, Siemens Research Labs, Germany.

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