Method of manufacturing semiconductor device with contact struct

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437194, 437195, 437197, 437200, H01L 21285

Patent

active

056521804

ABSTRACT:
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

REFERENCES:
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4740483 (1988-04-01), Tobin
patent: 4772571 (1988-09-01), Scovell et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4871691 (1989-10-01), Torres et al.
patent: 4904620 (1990-02-01), Schmitz
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5008217 (1991-04-01), Case et al.
patent: 5043300 (1991-08-01), Nulman
patent: 5104694 (1992-04-01), Saito et al.
patent: 5141897 (1992-08-01), Manocha et al.
patent: 5187120 (1993-02-01), Wang
patent: 5200639 (1993-04-01), Isuizuka et al.
patent: 5209816 (1993-05-01), Yu et al.
patent: 5217756 (1993-06-01), Shinzawa
patent: 5231056 (1993-07-01), Sandhu
patent: 5270254 (1993-12-01), Chen et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5273755 (1993-12-01), Dyer et al.
patent: 5288665 (1994-02-01), Nulman
patent: 5344792 (1994-09-01), Sandhu et al.
S. Wolf, "Silicon Processing For the VLSI Era" vol. II, 1990 pp. 116-117, 121-123, 128-133, 164-167, 238-239, 251-255.
Y.H. Ku et al., Appl. Phys. Lett., 50, 22 (1987) 1598 "Stable, Self Aligned TiN.sub.x O.sub.y /TiSi.sub.2 contact . . . ".
Y.H. Ku et al., Thin Solid Films, 172 (1989) "Self Aligned TiN.sub.x O.sub.y /TiSi.sub.2 contact formation".
H. Kaneko et al., IEEE Trans. Electron Dev., 33,11 (1986) 1702 "Self Aligned Nitridation of Silicide (Sanicide)".
B.-Z. Li et al., J. Vac. Sci. Tehnol., B5,6 (1987) 1667 "Self Aligned TiSi . . . By NH.sub.3 Plasma Assisted . . . ".
"Formation of Texture Controlled Aluminum and Its Migration Performance In Al-Si/TiN Stacked Structure", M. Kageyama et al., 1991, pp. 97-101, IEEE/IRPS.
"CVD Aluminum For Submicron VLSI Metallization", W.Y.-C. Lai et al., VMIC Conference, Jun. 11-12, 1991, pp. 89-95.
"Improvement of the Interface between Selectively Deposited A1 and Si by Annealing", K. Tani et al., Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 543-545.
"Characterization of LPCVD Aluminum for VLSI Processing", R.A. Levey et al., J. Chemical Soc., Solid State Science and Technology, Sep. 1984, pp. 2175-2182.
"Selective Aluminum Chemical Vapor Deposition", K. Tsubouchi et al., Journal of Vacuum Science and Technology: Part A., vol. 10, No. 4, Jul. 1992, New York US pp. 856-862.
"Using Transition Metal Conducting Oxides to Prevent Conductivity Degradation of Submicron Wiring at High Temperatures", IBM Technical Disclosure Bulletin, vo. 31, No. 2, Jul. 1988, New York US pp. 16-18 (p. 17, paragraph 2 --p. 18, paragraph 3).
"Use of Chem-Mech Polishing To Enhance Selective CVD-W", IBM Technical Disclosure Bulletin., vol. 34, No. 7B, Dec. 1991, New York US p.87 (The Whole Document).
"The Use of TISI.sub.2 For Self Aligned Silicide (Salicide) Technology", Ting et al., Jun. 25-26, 1985, V-MIC Conf., pp. 307-318.
"A Novel Double-Self-Aligned Tisi2/T1N Contact With Selective CVD W Plug For Submicron Device and Interconnect Applications", Wang et al., pp. 41-42.
"Improvement of the Interface between Selectively Deposited Al and Si by Annealing", Tani et al., Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 543-545.
"Planarized Aluminum Metallization for Sub-0.5 um CMOS Technology", Chen et al., IEEE, 1990, pp. 3.4.1-3.4.4 IEDM 90.
"The Properties of Al-Cu/Ti Films sputter Deposited at Elevated Temperatures and High DC Bias", Hariu et al., 1989, pp. 210-214.
"High-Performance CMOS for Oxidation-Planarized Twin Tubs and One-Mask Sealed Diffusion-Junctions", Liu et al., 1993 IEEE, pp. 17.2.1-17.3.1 IEDM 93.
"A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed CMOS", Yoshida et al., Extended Abstracts of the 1993 International Conf. on Solid State Devices and Materials, Makuhari, 1993, pp. 567-569.
"Selective Growth of Aluminum Using a Novel CVD System", Amazawa et al., 442-IEDM, 1988 IEEE, pp. 442-445.
"Novel self-aligned W/TiN/TiSi.sub.2 contact structure for very shallow junctions and interconnections", Joshi et al., Appl. Phys. Lett.54(17) 24 Apr. 1989, pp. 1672-1674.
"Selective Titanium Silicide Chemical Vapor Deposition with Surface Cleaning by Silane and Ohmic Contact Formation to Very Shallow Junction", Saito et al., J. Electrochem. Soc., vol. 140, No. 2, Feb. 1993, pp. 513-518.
T. Kikkawa et al., IEEE Trans. Electron Dev., 40(2)(1993)296, "A quarter-micron interconnection . . . TiN/Al-Si-Cu/TiN/Al-Ci-Cu/TiN/Ti multilayer structure". Feb. 1993.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device with contact struct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device with contact struct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device with contact struct will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-633412

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.