Method of manufacturing semiconductor device with a gettering si

Details Method of manufacturing semiconductor device with a gettering si Method of manufacturing semiconductor device with a gettering si

1994-10-14

1996-05-14

Fourson, George

Fishing, trapping, and vermin destroying

437 10, H01L 21322

Patent

active

055167063

ABSTRACT:
Silicon substrate is provided with silicon single-crystalline wafer, natural oxide film and poly-crystalline silicon film. The thickness of natural oxide film is controlled to be less than 10 .ANG.. Since the thickness of natural oxide film is made less than 10 .ANG., heavy metals travel smoothly from silicon single-crystalline wafer to poly-crystalline silicon film in the process of gettering. In other words, it is possible to enhance gettering effect.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4375125 (1983-03-01), Byatt
patent: 4631809 (1986-12-01), Roy
patent: 4828629 (1989-05-01), Ikeda et al.
patent: 4985372 (1991-01-01), Narita
patent: 5189508 (1993-02-01), Tachimoro et al.

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