Method of manufacturing semiconductor device where characteristi

Details Method of manufacturing semiconductor device where characteristi Method of manufacturing semiconductor device where characteristi

1997-11-10

2000-02-01

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438 14, H01L 21331

Patent

active

060202459

ABSTRACT:
The present invention realizes a manufacturing method of bipolar transistors allowing omission of photolithographic process of the emitter electrode polysilicon and measurement of the characteristics of the transistor before forming metal electrodes. The present invention discloses a diffusion check transistor within a wafer for mass producing the bipolar transistor having the same structure and the same electrical characteristics. The diffusion check transistor has a collector probe opening of a size which allows a probe needle to contact the collector electrode in the insulated region for measurement, emitter opening of a size which allows the probe to contact emitter electrode positioned in the region which adjoins the preceding region beyond the insulation wall, a trench to bridge between emitter opening and emitter region, burying emitter electrode polysilicon in the trench to connect them electrically, and base opening the size of the opening in an adjoining region, so that the diffusion transistor allows measurement of the diffusivity of the transistor before forming the metal electrodes.

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M. Sugiyama et al., "A 40GHz f.sub.T Si Bipolar Transistor LSI Technology", Proceedings of the International Electron Devices Meeting, Washington, Dec. 3-6, 1989, Institute of Electrical and Electronics Engineers, No. 3, Dec. 1989, pp. 221-224.
Patent Abstracts of Japan, vol. 012, No. 221 (E-625), Jun. 23, 1998.
David J. Roulston, Bipolar Semiconductor Devices, "Advanced Technology Devices", McGraw-Hill, Singapore, 1990 p. 342-345.
F. Sato et al., "A `Self-Aligned` Selective MBE Technology For High-Performance Bipolar Transistors," IEDM Technical Digest, San Francisco, California, Dec. 9-12, 1990, pp. 607-610.

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