Method of manufacturing semiconductor device utilizing selective

Details Method of manufacturing semiconductor device utilizing selective Method of manufacturing semiconductor device utilizing selective

1984-06-26

1985-10-15

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29576W, 29578, 148DIG26, 148DIG50, 156612, 357 50, H01L 21205, H01L 2176

Patent

active

045472319

ABSTRACT:
Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.

REFERENCES:
patent: 3206339 (1965-09-01), Thornton
patent: 3265542 (1966-08-01), Hirshon
patent: 3421055 (1969-01-01), Bean et al.
patent: 3661636 (1972-05-01), Green et al.
Sirtl et al., "Selective Epitaxy of Silicon . . . " Semiconductor Silicon (Text) New York, Electrochem. Soc., May 1969, pp. 169-188.
Silvestri et al., "Ge Epitaxial Refill Deposition . . . Structures" IBM J. Res. Develop., Jan. 1972, pp. 71-75.
Silvestri et al., "Growth Mechanism . . . Near SiO.sub.2 -Ge Boundary" J. Electrochem. Soc., Feb. 1972, vol. 119, No. 2, pp. 245-250.
Endo et al., "Novel Device Isolation . . . Selective Epitaxial Growth" I.E.D.M., Dec. 1982, pp. 241-244.

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