Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-05-06
1983-04-12
Andrews, M. J.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576W, 29577C, 148187, 148190, 148191, 357 48, 357 89, H01L 2174, H01L 2176
Patent
active
043797261
ABSTRACT:
A method of manufacturing a semiconductor device, which comprises the steps of forming a first high impurity concentration region of a conductivity type opposite to the conductivity type of a semiconductor substrate in the substrate along the principal surface thereof, depositing a first epitaxial layer of the same conductivity type as the substrate on the entire principal surface thereof, forming a low impurity concentration region of the opposite conductivity type to the substrate in the first epitaxial layer along a surface portion thereof corresponding to the first high impurity concentration region, forming a second high impurity concentration region of the opposite conductivity type to the substrate in the first epitaxial layer along a different surface portion thereof, forming a second epitaxial layer of the opposite conductivity type to the substrate on the first epitaxial layer, thermally treating the resultant intermediate device to cause diffusion of the impurities in the first and second high impurity concentration region into the respective first and second epitaxial layers and also causing diffusion of the impurity in the low impurity concentration region into the entire portion of the first epitaxial layer corresponding to the first high impurity concentration region, and forming an element isolation region of the same conductivity type as the substrate in the second epitaxial layer such that the element isolation region reaches the first epitaxial layer.
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patent: 3767486 (1973-10-01), Imaizumi
patent: 3912555 (1975-10-01), Tsuyuki
patent: 4046605 (1977-09-01), Nelson et al.
patent: 4168997 (1979-09-01), Compton
patent: 4272307 (1981-06-01), Mayrand
Hiraki Shun-ichi
Kumamaru Kuniaki
Yonezawa Toshio
Andrews M. J.
Saba W. G.
Tokyo Shibaura Denki Kabushiki Kaisha
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