Radiant energy – Means to align or position an object relative to a source or...
Patent
1994-11-30
1996-03-12
Anderson, Bruce C.
Radiant energy
Means to align or position an object relative to a source or...
250397, H01J 3700
Patent
active
054988772
ABSTRACT:
A method of manufacturing a semiconductor device, includes the steps of forming a measurement mark of a lower layer on a semiconductor substrate in a photolithography process, forming a measurement mark of an upper layer to be superposed on the measurement mark of the lower layer in the photolithography process, measuring relative sizes between the measurement marks of lower and upper layers in X and Y directions on a plane, and calculating a relative alignment error size between the measurement marks and an error size of the measurement mark with respect to a reference value on the basis of the measured value, wherein a result of the photolithography process is determined on the basis of the calculated error sizes.
REFERENCES:
patent: 4370554 (1983-01-01), Bohlen et al.
patent: 4908656 (1990-03-01), Suwa et al.
patent: 5172331 (1992-12-01), Yamada
patent: 5276337 (1994-01-01), Starikov
patent: 5393988 (1995-02-01), Sakamoto
patent: 5422491 (1995-06-01), Sakamoto
Anderson Bruce C.
NEC Corporation
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