Method of manufacturing semiconductor device using ion implantat

Details Method of manufacturing semiconductor device using ion implantat Method of manufacturing semiconductor device using ion implantat

1993-07-06

1994-09-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437 62, H01L 21265

Patent

active

053468414

ABSTRACT:
In a method of manufacturing a semiconductor device, after forming a mask for blocking ion implantation in a predetermined position on the main surface of a silicon substrate, oxygen ions are implanted from the direction making an angle of about 45.degree. with respect to the main surface while intermittently changing the implantation energy and the dose in a suitable manner. This process of oxygen ion implantation is carried out with the silicon substrate being rotated in a plane parallel to the surface. According to the process above, an element isolation film is formed surrounding a portion below an active region in the silicon substrate only by the process of oxygen ion implantation and a heat treatment process after that. As a result, the productivity is increased compared with in the conventional method in which an element isolation film on the side portion of the active region is formed by thermal oxidation, and degradation of the properties of crystal and residual ions in the active regions are also prevented.

REFERENCES:
patent: 4437225 (1984-03-01), Mizutani
patent: 4676841 (1987-06-01), Celler
patent: 4725561 (1988-02-01), Haond et al.
patent: 4810664 (1989-03-01), Kamins et al.
patent: 4835113 (1989-05-01), Celler et al.
patent: 4921812 (1990-05-01), Nagai et al.

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