Metal treatment – Compositions – Heat treating
Patent
1984-09-20
1987-04-28
Hearn, Brian E.
Metal treatment
Compositions
Heat treating
148DIG60, 148DIG118, 29576T, H01L 21324
Patent
active
046611665
ABSTRACT:
The inventive method of manufacturing a semiconductor device is carried out by slicing a silicon single crystal grown by a Czochralski method, thereby to provide a wafer (1), annealing the wafer (1) at a temperature range of 600.degree. C. to 800.degree. C. in an atmosphere including an inert gas and a small amount of oxygen for approximately 2 to 6 hours, thereby to precipitate oxygen (2) in the whole wafer (1), and then annealing the wafer (1) in the temperature range of 1000.degree. C. to 1100.degree. C. in a water vapor atmosphere including chlorine, thereby to form an oxide film (3) on the surface of the wafer (1), whereby a denuded zone (4) is formed beneath the oxide film (3) while crystal defects (5a-5d, 6) serving as a getter of impurities such as metals are formed beneath the denuded zone.
In accordance with the inventive method, a denuded zone (4) having a controlled thickness can be formed in the wafer (1) without being influenced by the initial crystal defects and the oxygen concentration of the wafer.
REFERENCES:
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Ogino et al., "Two-Step Thermal Anneal and Its Application to a CCD Sensor and CMOS LSI", J. Electrochm. Soc.: Solid-State Science & Technology, Jun. 1983, pp. 1397-1402.
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Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
Quach Tuan
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