Method of manufacturing semiconductor device structures utilizin

Details Method of manufacturing semiconductor device structures utilizin Method of manufacturing semiconductor device structures utilizin

1994-10-17

1996-04-02

Fourson, George

Fishing, trapping, and vermin destroying

437151, 437 7, H01L 2122, H01L 2166

Patent

active

055040160

ABSTRACT:
The effect of dopant-dopant interaction on diffusion in silicon for a specific set of impurities is modeled. The first step in the modeling process involved quantum chemical calculations. The connection between the atomic scale results and macroscopic behavior was made through the medium for transmission of interactions between dopants. The molecular orbitals of the lattice system comprise that medium; consequently, interactions can be transmitted, with minimal reduction in magnitude, over separations of hundreds of lattice spacings. Macroscopically, additional flux components are generated that modify the conventional expression of Fick's second law. Detailed simulation of boron and phosphorus diffusion in germanium rich regions of silicon illustrate the power of this approach to successfully model and predict the complex behavior exhibited by a particular set of interacting dopant species.

REFERENCES:
patent: 3748198 (1973-07-01), Base et al.
patent: 3867203 (1975-02-01), Gesing et al.
patent: 4456879 (1984-06-01), Kleinknecht
patent: 4589936 (1986-05-01), Komatsu
patent: 4962461 (1990-10-01), Meyer et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2: Process Integration, 1990, pp. 643-665, 684-690.
S. M. Hu et al., "On Models of Phosphorus Diffusion in Silicon", Journal of Applied Physics, vol., 54, No. 12, Dec. 1983.
F. F. Morehead, "Enhances Tail Diffusion of Phosphorous and Boron in Silicon: Self Interstitial Phenomena", Applied Physics Letter, vol. 48, No. 2, Jan. 13, 1986.
N. E. B. Cowern, "Analytical Description for the Diffusion of Recombination of Point Defects in Silicon", Applied Physics Letter, vol. 54, No. 15, Apr. 10, 1989.
A. F. W. Willoughby et al, "Diffusion of boron in Heavily Doped N and P Silicon", Journal of Applied Physics, vol. 59, No. 7, Apr. 1, 1986.
R. Deaton et al, "Diffusion Phenomena Due to Ion Implantation Damage and Arsenic and Phosphorous Co-Diffusion", Journal of Applied Physics, vol. 67, No. 4, Feb. 15, 1990.
J. C. C. Tsai, "Point Defect Generation During Phosphorous Diffusion in Silicon", Journal the Electrochemical Society: Solid State Science and Technology, vol. 134, No. 9, Sep. 1987.
B. J. Muluaney et al, "The Effect of Concentration-Dependent Defect Recombination on Phosphorous Diffusino and Silicon", Journal of Applied Physics, vol. 67, No. 6, Mar. 1990.
S. Aronowitz, "Dopant Diffusion Control in Silicon Using Germanium", Journal of Applied Physics, vol. 68, No. 7, Oct. 1, 1990.
S. Aronowitz, "Interstitial Interactions: Aluminum-boron, Aluminum-gallium, and boron-gallium pull effect", Journal of Applied Physics, vol. 61, No. 7, Apr. 1, 1987.

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